Quantification of Ge in Si1-xGex by using low energy Cs+ and O2+ ion beams

dc.contributor.author	Pureti, Rathaiah
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.date.accessioned	2021-10-21T11:08:23Z
dc.date.available	2021-10-21T11:08:23Z
dc.date.issued	2013
dc.identifier.doi	10.1002/sia.5049
dc.identifier.issn	0142-2421
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/22961
dc.source.beginpage	402
dc.source.endpage	405
dc.source.issue	1
dc.source.journal	Surface and Interface Analysis
dc.source.volume	45
dc.title	Quantification of Ge in Si1-xGex by using low energy Cs+ and O2+ ion beams
dc.type	Journal article
dspace.entity.type	Publication
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