Publication:

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

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dc.contributor.authorSimicic, Marko
dc.contributor.authorAshif, Nowab Reza
dc.contributor.authorHellings, Geert
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorNag, Manoj
dc.contributor.authorKronemeijer, Auke Jisk
dc.contributor.authorMyny, Kris
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidextKronemeijer, Auke Jisk::0000-0001-5394-0264
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecChen, Shih-Hung::0000-0002-6481-2951
dc.date.accessioned2022-08-30T09:22:43Z
dc.date.available2022-08-18T12:54:32Z
dc.date.available2022-08-30T09:22:43Z
dc.date.embargo2022-04-03
dc.date.issued2020-04-03
dc.identifier.doi10.1016/j.microrel.2020.113632
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40269
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage113632
dc.source.conferencena
dc.source.conferencedatena
dc.source.conferencelocationna
dc.source.journalMICROELECTRONICS RELIABILITY
dc.source.numberofpages8
dc.source.volume108
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsElectrostatic discharge
dc.subject.keywordsESD
dc.subject.keywordsThin-film transistor
dc.subject.keywordsTFT
dc.subject.keywordsIndium-gallium-zinc-oxide
dc.subject.keywordsIndium-tin-zinc-oxide
dc.subject.keywordsIGZO
dc.subject.keywordsITZO
dc.title

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

dc.typeProceedings paper
dspace.entity.typePublication
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