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High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg
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1 since deposited on 2021-10-27
Acq. date: 2026-05-17
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1938 since deposited on 2021-10-27
Acq. date: 2026-05-17
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Downloads
1 since deposited on 2021-10-27
Acq. date: 2026-05-17
Views
1938 since deposited on 2021-10-27
Acq. date: 2026-05-17
Citations