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High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg
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Acq. date: 2025-12-10
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Acq. date: 2025-12-10
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1 since deposited on 2021-10-27
Acq. date: 2025-12-10
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1935 since deposited on 2021-10-27
4last month
Acq. date: 2025-12-10
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