Publication:

High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg

Date

2019
Proceedings Paper
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dc.contributor.authorCapogreco, Elena
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorMarinov, Daniil
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSebaai, Farid
dc.contributor.authorMannaert, Geert
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorVrancken, Christa
dc.contributor.authorOpdebeeck, Ann
dc.contributor.authorMitard, Jerome
dc.contributor.authorLanger, Robert
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDemuynck, Steven
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorOpdebeeck, Ann
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorBarla, Kathy
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-27T07:48:29Z
dc.date.available2021-10-27T07:48:29Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32635
dc.source.beginpageT94
dc.source.conference2019 Symposia on VLSI Technology and Circuits
dc.source.conferencedate9/06/2019
dc.source.conferencelocationKyoto Japan
dc.source.endpageT95
dc.title

High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg

dc.typeProceedings paper
dspace.entity.typePublication
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