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Photoresist treatment using an ICP H2 plasma and low ESC temperature: LWR study

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dc.contributor.authorDe Schepper, Peter
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorGoodyear, Andy
dc.contributor.authorEl Otell, Ziad
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorDe Schepper, Peter
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorEl Otell, Ziad
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-22T01:08:13Z
dc.date.available2021-10-22T01:08:13Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23717
dc.source.conferencePlasma Etch and Strip Processes in Microtechnology - PESM
dc.source.conferencedate12/05/2014
dc.source.conferencelocationGrenoble France
dc.title

Photoresist treatment using an ICP H2 plasma and low ESC temperature: LWR study

dc.typeMeeting abstract
dspace.entity.typePublication
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