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Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating
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Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Agaiby, R.
;
O'Neill, A.G
;
Olsen, S.H
;
Eneman, Geert
;
Verheyen, Peter
;
Loo, Roger
;
Claeys, Cor
Journal
IEEE Transactions on Electron Devices
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1938
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Acq. date: 2025-12-12
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Metrics
Views
1938
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-12
Citations