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Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating

Date

2008
Journal article
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dc.contributor.authorAgaiby, R.
dc.contributor.authorO'Neill, A.G
dc.contributor.authorOlsen, S.H
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T06:13:27Z
dc.date.available2021-10-17T06:13:27Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13291
dc.source.beginpage1568
dc.source.endpage1573
dc.source.issue6
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume55
dc.title

Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating

dc.typeJournal article
dspace.entity.typePublication
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