Publication:

Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors

Date

2013
Proceedings Paper
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorChew, Soon Aik
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorFavia, Paola
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-21T08:16:29Z
dc.date.available2021-10-21T08:16:29Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22488
dc.source.beginpage27
dc.source.conference8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
dc.source.endpage28
dc.title

Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors

dc.typeProceedings paper
dspace.entity.typePublication
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