Publication:

Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM

Date

2021
Journal article
https://doi.org/10.1016/j.micron.2021.103123
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dc.contributor.authorHan, Han
dc.contributor.authorStrakos, Libor
dc.contributor.authorHantschel, Thomas
dc.contributor.authorVystavel, Tomas
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.date.accessioned2022-03-03T13:32:32Z
dc.date.available2022-03-03T13:32:32Z
dc.date.issued2021
dc.identifier.doi10.1016/j.micron.2021.103123
dc.identifier.issn0968-4328
dc.identifier.pmidMEDLINE:34343885
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39274
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage103123
dc.source.issuena
dc.source.journalMICRON
dc.source.numberofpages8
dc.source.volume150
dc.subject.keywordsELECTRON CHANNELING CONTRAST
dc.subject.keywordsDISLOCATIONS
dc.title

Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM

dc.typeJournal article
dspace.entity.typePublication
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