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CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks

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dc.contributor.authorHopf, Toby
dc.contributor.authorErcken, Monique
dc.contributor.authorMannaert, Geert
dc.contributor.authorKunnen, Eddy
dc.contributor.authorTao, Zheng
dc.contributor.authorVandenbroeck, Nadia
dc.contributor.authorSebaai, Farid
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorMertens, Hans
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDemuynck, Steven
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorVandenbroeck, Nadia
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-24T05:49:10Z
dc.date.available2021-10-24T05:49:10Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.doi10.1117/12.2257668
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28520
dc.source.beginpage1014618
dc.source.conferenceAdvances in Patterning Materials and Processes XXXIV
dc.source.conferencedate26/02/2017
dc.source.conferencelocationSan Jose, CA USA
dc.title

CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks

dc.typeProceedings paper
dspace.entity.typePublication
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