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Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs

 
dc.contributor.authorPanarella, Luca
dc.contributor.authorKaczer, Ben
dc.contributor.authorSmets, Quentin
dc.contributor.authorVerreck, Devin
dc.contributor.authorSchram, Tom
dc.contributor.authorCott, Daire
dc.contributor.authorLin, Dennis
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorAfanasiev, Valeri
dc.contributor.imecauthorPanarella, Luca
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecTyaginov, Stanislav::0000-0002-5348-2096
dc.contributor.orcidimecAsselberghs, Inge::0000-0001-8371-3222
dc.contributor.orcidimecLockhart de la Rosa, Cesar Javier::0000-0002-1401-0141
dc.contributor.orcidimecAfanasiev, Valeri::0000-0001-5018-4539
dc.contributor.orcidimecCott, Daire::0009-0000-0890-8820
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.date.accessioned2023-11-28T08:41:32Z
dc.date.available2023-07-15T17:05:46Z
dc.date.available2023-11-28T08:41:32Z
dc.date.issued2023
dc.description.wosFundingTextThis work was done in the imec IIAP core CMOS programs and supported by The Research Foundation - Flanders (FWO).
dc.identifier.doi10.1109/IRPS48203.2023.10117803
dc.identifier.eisbn978-1-6654-5672-2
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42157
dc.publisherIEEE
dc.source.conference61st IEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 26-30, 2023
dc.source.conferencelocationMonterey
dc.source.journalna
dc.source.numberofpages6
dc.subject.keywordsAL2O3
dc.title

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs

dc.typeProceedings paper
dspace.entity.typePublication
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