Publication:

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Date

2024

Journal article

https://doi.org/10.1109/led.2024.3361164

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Author(s)

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Wellekens, Dirk

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Cosnier, Thibault

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Bakeroot, Benoit

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Posthuma, Niels

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Decoutere, Stefaan

Journal

IEEE ELECTRON DEVICE LETTERS

Statistics

685 since deposited on 2024-07-11

Acq. date: 2026-09-11