1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Simple item page Full metadata Statistics

Author(s)

;

;

;

Wellekens, Dirk

;

;

;

Cosnier, Thibault

;

;

Bakeroot, Benoit

;

Posthuma, Niels

;

;

Decoutere, Stefaan

Journal

IEEE ELECTRON DEVICE LETTERS

Metrics

659 since deposited on 2024-07-11

Acq. date: 2025-10-23