1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan

doi:10.1109/LED.2024.3361164

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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

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2024

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https://doi.org/10.1109/LED.2024.3361164

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IEEE ELECTRON DEVICE LETTERS

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676 since deposited on 2024-07-11

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Acq. date: 2026-04-05

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

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