Publication:

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Date

2024
Journal article
https://doi.org/10.1109/LED.2024.3361164
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dc.contributor.authorKumar, Sujit
dc.contributor.authorGeens, Karen
dc.contributor.authorVohra, Anurag
dc.contributor.authorWellekens, Dirk
dc.contributor.authorCingu, Deepthi
dc.contributor.authorFabris, Elena
dc.contributor.authorCosnier, Thibault
dc.contributor.authorHahn, H.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorPosthuma, Niels
dc.contributor.authorLanger, Robert
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorKumar, Sujit
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorCingu, Deepthi
dc.contributor.imecauthorFabris, Elena
dc.contributor.imecauthorCosnier, Thibault
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecKumar, Sujit::0000-0002-2564-2216
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecWellekens, Dirk::0000-0003-4532-5784
dc.contributor.orcidimecCingu, Deepthi::0000-0002-3042-7289
dc.contributor.orcidimecFabris, Elena::0000-0003-1345-5111
dc.contributor.orcidimecCosnier, Thibault::0000-0001-7991-7222
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2024-11-07T15:36:03Z
dc.date.available2024-07-11T18:26:48Z
dc.date.available2024-11-07T15:36:03Z
dc.date.issued2024
dc.description.wosFundingTextNo Statement Available
dc.identifier.doi10.1109/LED.2024.3361164
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44146
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage657
dc.source.endpage660
dc.source.issue4
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume45
dc.title

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

dc.typeJournal article
dspace.entity.typePublication
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