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Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
Publication:
Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
Date
2010
Proceedings Paper
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20417.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lin, Dennis
;
Waldron, Niamh
;
Brammertz, Guy
;
Martens, Koen
;
Wang, Wei-E
;
Sioncke, Sonja
;
Delabie, Annelies
;
Bender, Hugo
;
Conard, Thierry
;
Tseng, W.H.
;
Lin, S.C.
;
Temst, K.
;
Vantomme, Andre
;
Mitard, Jerome
;
Caymax, Matty
;
Meuris, Marc
;
Heyns, Marc
;
Hoffmann, Thomas Y.
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2
since deposited on 2021-10-18
Acq. date: 2025-10-23
Views
1977
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Downloads
2
since deposited on 2021-10-18
Acq. date: 2025-10-23
Views
1977
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations