Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Mercha, Abdelkarim
dc.contributor.author	Claeys, Cor
dc.contributor.author	Lukyanchikova, N.
dc.contributor.author	Garbar, N.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Mercha, Abdelkarim
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Mercha, Abdelkarim::0000-0002-2174-6958
dc.date.accessioned	2021-10-15T16:16:06Z
dc.date.available	2021-10-15T16:16:06Z
dc.date.issued	2004
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/9602
dc.source.beginpage	1008
dc.source.endpage	1016
dc.source.issue	6
dc.source.journal	IEEE Trans. Electron Devices
dc.source.volume	51
dc.title	Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs
dc.type	Journal article
dspace.entity.type	Publication
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