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Development and evaluation of a-SiC:H films using a dimethylsilacyclopentane precursor as a low -k Cu capping layer in advanced interconnects

Date

2013
Proceedings Paper
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dc.contributor.authorVan Besien, Els
dc.contributor.authorWang, Cong
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorSingh, Arjun
dc.contributor.authorBarbarin, Yohan
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorVan Elshocht, Sven
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorSingh, Arjun
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-21T13:10:44Z
dc.date.available2021-10-21T13:10:44Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23222
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6615577&contentType=Conference+Publications
dc.source.beginpage105
dc.source.conferenceIEEE International Interconnect Technology Conference - IITC
dc.source.conferencedate13/06/2013
dc.source.conferencelocationKyoto Japan
dc.source.endpage107
dc.title

Development and evaluation of a-SiC:H films using a dimethylsilacyclopentane precursor as a low -k Cu capping layer in advanced interconnects

dc.typeProceedings paper
dspace.entity.typePublication
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