Publication:

RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOS

Date

2003-12
Proceedings Paper
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dc.contributor.authorPantisano, Luigi
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorKaczer, Ben
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorVenegas, Rafael
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCheung, K.P.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-15T05:59:53Z
dc.date.available2021-10-15T05:59:53Z
dc.date.issued2003-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7971
dc.source.beginpage181
dc.source.conferenceTechnical Digest IEDM - International Electron Devices Meeting
dc.source.conferencedate9/12/2003
dc.source.conferencelocationWashington DC USA
dc.source.endpage184
dc.title

RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOS

dc.typeProceedings paper
dspace.entity.typePublication
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