Publication:

Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier Stress

Date

2021
Journal article
https://doi.org/10.1109/TED.2021.3075169
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dc.contributor.authorGupta, Anshul
dc.contributor.authorGupta, Charu
dc.contributor.authorVeloso, Anabela
dc.contributor.authorParvais, Bertrand
dc.contributor.authorDixit, Abhisek
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidextGupta, Anshul::0000-0003-0830-1193
dc.contributor.orcidextGupta, Charu::0000-0002-8115-3548
dc.contributor.orcidextDixit, Abhisek::0000-0002-2244-1697
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.accessioned2023-08-04T09:51:38Z
dc.date.available2023-06-20T10:38:16Z
dc.date.available2023-08-04T09:51:38Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3075169
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42001
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2641
dc.source.endpage2646
dc.source.issue6
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume68
dc.subject.keywordsDEGRADATION
dc.subject.keywordsIMPACT
dc.subject.keywordsRELIABILITY
dc.subject.keywordsINTERFACE
dc.subject.keywordsFINFETS
dc.title

Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier Stress

dc.typeJournal article
dspace.entity.typePublication
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