Improved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodes

dc.contributor.author	Czerwinski, A.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Vanhellemont, Jan
dc.contributor.author	Tomaszewski, D.
dc.contributor.author	Gibki, J.
dc.contributor.author	Bakowski, A.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-09-30T08:02:24Z
dc.date.available	2021-09-30T08:02:24Z
dc.date.embargo	9999-12-31
dc.date.issued	1997
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1787
dc.source.beginpage	477
dc.source.conference	Proceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97
dc.source.conferencedate	5/10/1997
dc.source.conferencelocation	Spa Belgium
dc.source.endpage	482
dc.title	Improved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodes
dc.type	Proceedings paper
dspace.entity.type	Publication
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