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InGaAs channel IFQW-MOSFET: Effect of InAlAs interfacial passivation layer and (NH4)2S treatment on the electrical behavior

Date

2010
Proceedings Paper
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dc.contributor.authorAlian, AliReza
dc.contributor.authorMerckling, Clement
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T15:15:21Z
dc.date.available2021-10-18T15:15:21Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16642
dc.source.conference41st IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate1/12/2010
dc.source.conferencelocationSan Diego, CA USA
dc.title

InGaAs channel IFQW-MOSFET: Effect of InAlAs interfacial passivation layer and (NH4)2S treatment on the electrical behavior

dc.typeProceedings paper
dspace.entity.typePublication
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