Publication:
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H-SiC epitaxial layers
| dc.contributor.author | Calabretta, C. | |
| dc.contributor.author | Pecora, A. | |
| dc.contributor.author | Agati, Marta | |
| dc.contributor.author | Muoio, A. | |
| dc.contributor.author | Scuderi, V. | |
| dc.contributor.author | Privitera, S. | |
| dc.contributor.author | Reitano, R. | |
| dc.contributor.author | Boninelli, S. | |
| dc.contributor.author | La Via, F. | |
| dc.contributor.imecauthor | Agati, Marta | |
| dc.contributor.orcidimec | Agati, Marta::0000-0002-2108-4800 | |
| dc.date.accessioned | 2025-03-24T11:58:36Z | |
| dc.date.available | 2024-03-26T17:00:54Z | |
| dc.date.available | 2025-03-24T11:58:36Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No 823717 - ESTEEM3. This work has been partially funded by European Union (NextGeneration EU), through the MUR-PNRR project SAMOTHRACE (ECS00000022) This research was in part funded by the ECSEL-JU project REACTION (first and euRopEAn siC eigTh Inches pilOt liNe), Grant Agreement No. 783158. | |
| dc.identifier.doi | 10.1016/j.mssp.2024.108175 | |
| dc.identifier.issn | 1369-8001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43733 | |
| dc.publisher | ELSEVIER SCI LTD | |
| dc.source.beginpage | Art. 108175 | |
| dc.source.endpage | N/A | |
| dc.source.issue | May | |
| dc.source.journal | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | |
| dc.source.numberofpages | 8 | |
| dc.source.volume | 174 | |
| dc.subject.keywords | SILICON-CARBIDE | |
| dc.subject.keywords | AL | |
| dc.subject.keywords | TECHNOLOGY | |
| dc.subject.keywords | PHOSPHORUS | |
| dc.title | Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H-SiC epitaxial layers | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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