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Reliable gate-voltage-dependent channel-length and series resistance extraction technique taking into account threshold voltage reduction in MOSFETs

Date

1995
Proceedings Paper
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dc.contributor.authorBiesemans, Serge
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-29T13:04:16Z
dc.date.available2021-09-29T13:04:16Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/527
dc.source.beginpage807
dc.source.conferenceInternational Semiconductor Device Research Symposium; 5-8 Dec. 1995; Charlottesville, VA, USA.
dc.source.conferencedate5/12/1995
dc.source.conferencelocationCharlottesville, VA USA
dc.source.endpage810
dc.title

Reliable gate-voltage-dependent channel-length and series resistance extraction technique taking into account threshold voltage reduction in MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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