Publication:

Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.

Date

2004
Presentation
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dc.contributor.authorBlomme, Pieter
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorLorenzini, Martino
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecHaspeslagh, Luc::0000-0003-3561-3387
dc.date.accessioned2021-10-15T12:44:23Z
dc.date.available2021-10-15T12:44:23Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8594
dc.source.conference20th IEEE Non-Volatile Semiconductor Memory Workshop - NVSMW
dc.source.conferencedate23/08/2004
dc.source.conferencelocationMonterey, CA USA
dc.title

Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.

dc.typeOral presentation
dspace.entity.typePublication
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