Publication:

Analysis of the features of hot-carrier degradation in FinFETs

Date

2018-10
Journal article
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dc.contributor.authorMakarov, Alexander
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorKaczer, Ben
dc.contributor.authorJech, Markus
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorGrill, Alexander
dc.contributor.authorHellings, Geert
dc.contributor.authorVexler, Mikhail
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, Tibor
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-25T22:44:58Z
dc.date.available2021-10-25T22:44:58Z
dc.date.embargo9999-12-31
dc.date.issued2018-10
dc.identifier.issn1063-7826
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31262
dc.identifier.urlhttps://doi.org/10.1134/S1063782618100081
dc.source.beginpage1298
dc.source.endpage1302
dc.source.issue10
dc.source.journalSemiconductors
dc.source.volume52
dc.title

Analysis of the features of hot-carrier degradation in FinFETs

dc.typeJournal article
dspace.entity.typePublication
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