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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Publication:
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Date
2020
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hsu, Brent
;
Simoen, Eddy
;
Lin, Dennis
;
Stesmans, Andre
;
Goux, Ludovic
;
Delhougne, Romain
;
Carolan, Patrick
;
Bender, Hugo
;
Kar, Gouri Sankar
Journal
ECS Journal of Solid State Science and Technology
Abstract
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2003
since deposited on 2021-10-28
1
last month
Acq. date: 2025-12-08
Citations
Metrics
Views
2003
since deposited on 2021-10-28
1
last month
Acq. date: 2025-12-08
Citations