Publication:

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Date

2020
Journal article
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dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorStesmans, Andre
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDelhougne, Romain
dc.contributor.authorCarolan, Patrick
dc.contributor.authorBender, Hugo
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.date.accessioned2021-10-28T22:39:34Z
dc.date.available2021-10-28T22:39:34Z
dc.date.embargo9999-12-31
dc.date.issued2020
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35288
dc.identifier.urlhttps://doi.org/10.1149/2162-8777/ab8b70
dc.source.beginpage044006-1
dc.source.endpage044006-7
dc.source.issue4
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume9
dc.title

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

dc.typeJournal article
dspace.entity.typePublication
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