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Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain
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Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain
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Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hellings, Geert
;
Mitard, Jerome
;
Krom, Raymond
;
Witters, Liesbeth
;
Eneman, Geert
;
Hikavyy, Andriy
;
Loo, Roger
;
Bender, Hugo
;
Hoffmann, Thomas Y.
;
De Meyer, Kristin
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1892
since deposited on 2021-10-19
Acq. date: 2025-12-10
Citations
Metrics
Views
1892
since deposited on 2021-10-19
Acq. date: 2025-12-10
Citations