Publication:

Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain

Date

2011
Proceedings Paper
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dc.contributor.authorHellings, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorKrom, Raymond
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorBender, Hugo
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T14:13:55Z
dc.date.available2021-10-19T14:13:55Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19058
dc.source.beginpage5
dc.source.conferenceSilicon Nanoelectronics Workshop
dc.source.conferencedate12/06/2011
dc.source.conferencelocationKyoto Japan
dc.source.endpage6
dc.title

Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain

dc.typeProceedings paper
dspace.entity.typePublication
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