Publication:

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

Date

2005-06
Journal article
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dc.contributor.authorYamamoto, Kazuhiko
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRothschild, Aude
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorDeweerd, Wim
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorWickramanayaka, S.
dc.contributor.authorHayashi, S.
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T07:19:25Z
dc.date.available2021-10-16T07:19:25Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11584
dc.source.beginpage198
dc.source.endpage201
dc.source.journalMicroelectronic Engineering
dc.source.volume80
dc.title

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

dc.typeJournal article
dspace.entity.typePublication
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