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Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown

Date

1998
Journal article
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dc.contributor.authorHoussa, Michel
dc.contributor.authorNigam, Tanya
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-30T12:13:44Z
dc.date.available2021-09-30T12:13:44Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2641
dc.source.beginpage4351
dc.source.endpage4355
dc.source.issue8
dc.source.journalJournal of Applied Physics
dc.source.volume84
dc.title

Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown

dc.typeJournal article
dspace.entity.typePublication
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