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Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions
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Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bargallo Gonzalez, Mireia
;
Simoen, Eddy
;
Vissouvanadin Soubaretty, Bertrand
;
Thomas, Nicole
;
Taleb, Nadjib
;
Verheyen, Peter
;
Hikavyy, Andriy
;
Leys, Frederik
;
Richard, Olivier
;
Loo, Roger
;
Claeys, Cor
;
Machkaoutsan, Vladimir
;
Tomasini, P.
;
Thomas, S.G.
;
Lu, J.P
;
Wise, R.
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1957
since deposited on 2021-10-16
Acq. date: 2025-12-12
Citations
Metrics
Views
1957
since deposited on 2021-10-16
Acq. date: 2025-12-12
Citations