Publication:
Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length
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1949 since deposited on 2021-10-17
2last month
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Acq. date: 2026-02-25
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Statistics
Views
1949 since deposited on 2021-10-17
2last month
1last week
Acq. date: 2026-02-25
Citations