Authors

Collaert, Nadine; von Arnim, Klaus; Rooyackers, Rita; Vandeweyer, Tom; Mercha, Abdelkarim; Parvais, Bertrand; Witters, Liesbeth; Nackaerts, Axel; Altamirano Sanchez, Efrain; Demand, Marc; Hikavyy, Andriy; Demuynck, Steven; Devriendt, Katia; Bauer, F.; Ferain, Isabelle; Veloso, Anabela; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia

Conference

IEEE International Conference on IC Design and Technology - ICICDT

Title

Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length

Publication type

Proceedings paper

Embargo date

9999-12-31