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Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction
Publication:
Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction
Date
2008-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Favia, Paola
;
Klenov, Dmitri
;
Eneman, Geert
;
Verheyen, Peter
;
Bauer,
;
Weeks,
;
Thomas,
;
Bender, Hugo
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Abstract
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1866
since deposited on 2021-10-17
411
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1866
since deposited on 2021-10-17
411
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations