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The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
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Authors
Caymax, Matty
;
Leys, Frederik
;
Mitard, Jerome
;
Martens, Koen
;
Yang, Lijun
;
Pourtois, Geoffrey
;
Vandervorst, Wilfried
;
Meuris, Marc
;
Loo, Roger
ISSN
0013-4651
Issue
12
Journal
Journal of the Electrochemical Society
Volume
156
Title
The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
Publication type
Journal article
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