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The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks
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Authors
Vellianitis, Georgios
;
Van Dal, Mark
;
Boccardi, Guillaume
;
Duriez, Blandine
;
Voogt, Frans
;
Kaiser, Monja
;
Witters, Liesbeth
;
Lander, Rob
ISSN
0018-9383
Issue
7
Journal
IEEE Transactions on Electron Devices
Volume
56
Title
The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks
Publication type
Journal article
Embargo date
9999-12-31
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