Publication:
InGaAs channel IFQW-MOSFET: Effect of InAlAs interfacial passivation layer and (NH4)2S treatment on the electrical behavior
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1793 since deposited on 2021-10-18
1last month
Acq. date: 2026-02-26
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Statistics
Views
1793 since deposited on 2021-10-18
1last month
Acq. date: 2026-02-26
Citations