Publication:
InGaAs channel IFQW-MOSFET: Effect of InAlAs interfacial passivation layer and (NH4)2S treatment on the electrical behavior
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1791 since deposited on 2021-10-18
Acq. date: 2025-12-16
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Views
1791 since deposited on 2021-10-18
Acq. date: 2025-12-16
Citations