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Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
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Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cheng, Kai
;
Leys, Maarten
;
Dekoster, Johan
;
Degroote, Stefan
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1963
since deposited on 2021-10-18
Acq. date: 2026-01-09
Citations
Metrics
Views
1963
since deposited on 2021-10-18
Acq. date: 2026-01-09
Citations