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Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge
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Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Loo, Roger
;
Souriau, Laurent
;
Ong, Patrick
;
Kenis, Karine
;
Rip, Jens
;
Peter, Storck
;
Buschhardt, Thomas
;
Vorderwestner, Martin
Journal
Journal of Crystal Growth
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1884
since deposited on 2021-10-19
Acq. date: 2026-01-07
Citations
Metrics
Views
1884
since deposited on 2021-10-19
Acq. date: 2026-01-07
Citations