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On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics
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On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics
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Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ragnarsson, Lars-Ake
;
Mitard, Jerome
;
Kauerauf, Thomas
;
De Keersgieter, An
;
Schram, Tom
;
Rohr, Erika
;
Collaert, Nadine
;
Jurczak, Gosia
;
Hong, Sug-Hun
;
Tseng, Joshua
;
Wang, Wei-E
;
Trojman, Lionel
;
Bourdelle, Konstantin
;
Nguyen, B-Y
;
Absil, Philippe
;
Hoffmann, Thomas Y.
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1886
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Acq. date: 2025-12-10
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Metrics
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1886
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-10
Citations