Authors

Yamaguchi, Shinpei; Witters, Liesbeth; Mitard, Jerome; Eneman, Geert; Hellings, Geert; Fukuda, Masahiro; Hikavyy, Andriy; Loo, Roger; Veloso, Anabela; Crabbe, Yvo; Rohr, Erika; Favia, Paola; Bender, Hugo; Takeoka, S.; Vellianitis, Georgios; Wang, Wei-E; Ragnarsson, Lars-Ake; De Meyer, Kristin; Steegen, An; Horiguchi, Naoto

Conference

IEEE International Electron Devices Meeting - IEDM

Title

High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

Publication type

Proceedings paper

Embargo date

9999-12-31