Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology

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Authors
Guo, Wei; Moroz, Victor; Van der Plas, Geert; Choi, M.; Redolfi, Augusto; Smith, L.; Eneman, Geert; Van Huylenbroeck, Stefaan; Su, P.D.; Ivankovic, Andrej; De Wachter, Bart; Debusschere, Ingrid; Croes, Kris; De Wolf, Ingrid; Mercha, Abdelkarim; Beyer, Gerald; Swinnen, Bart; Beyne, Eric
Conference
International Electron Devices Meeting - IEDM
Title
Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology
Publication type
Proceedings paper
Embargo date
9999-12-31
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