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Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3
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Authors
Franco, Jacopo
;
Alian, AliReza
;
Kaczer, Ben
;
Lin, Dennis
;
Ivanov, Tsvetan
;
Pourghaderi, Mohammad Ali
;
Martens, Koen
;
Mols, Yves
;
Zhou, Daisy
;
Waldron, Niamh
;
Sioncke, Sonja
;
Kauerauf, Thomas
;
Collaert, Nadine
;
Thean, Aaron
;
Heyns, Marc
;
Groeseneken, Guido
Conference
International Reliability Physics Symposium - IRPS
Title
Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3
Publication type
Proceedings paper
Embargo date
9999-12-31
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