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Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack
Publication:
Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack
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Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fang, Wen
;
Simoen, Eddy
;
Arimura, Hiroaki
;
Mitard, Jerome
;
Thean, Aaron
;
Luo, Jun
;
Zhao, Chao
;
Claeys, Cor
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1912
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Acq. date: 2025-12-10
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Views
1912
since deposited on 2021-10-22
2
last month
Acq. date: 2025-12-10
Citations