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Evaluation of post etch residue cleaning solutions for the removal of TiN hardmask after dry etch of low-k dielectric materials on 45 nm pitch interconnects
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Evaluation of post etch residue cleaning solutions for the removal of TiN hardmask after dry etch of low-k dielectric materials on 45 nm pitch interconnects
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Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Payne, Makonnen
;
Lippy, Steve
;
Lieten, Ruben
;
Kesters, Els
;
Le, Quoc Toan
;
Murdoch, Gayle
;
Vega Gonzalez, Victor
;
Holsteyns, Frank
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Views
1908
since deposited on 2021-10-23
1
last month
1
last week
Acq. date: 2026-02-27
Citations