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Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors
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Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors
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Date
2017
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vereecke, Guy
;
De Coster, Hanne
;
Carolan, Patrick
;
Bender, Hugo
;
Willems, Kherim
;
Ragnarsson, Lars-Ake
;
Van Dorpe, Pol
;
Horiguchi, Naoto
;
Holsteyns, Frank
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Acq. date: 2025-12-18
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1990
since deposited on 2021-10-24
Acq. date: 2025-12-18
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Downloads
1
since deposited on 2021-10-24
Acq. date: 2025-12-18
Views
1990
since deposited on 2021-10-24
Acq. date: 2025-12-18
Citations