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Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior
Publication:
Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior
Date
2019-12
Journal article
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39335.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
He, Liang
;
Zhao, Pan
;
Liu, Jiahao
;
Su, Yahui
;
Chen, Hua
;
Jia, Xiaofei
;
Arimura, Hiroaki
;
Mitard, Jerome
;
Witters, Liesbeth
;
Horiguchi, Naoto
;
Collaert, Nadine
;
Claeys, Cor
;
Simoen, Eddy
Journal
IEEE Transactions on Electron Devices
Abstract
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1890
since deposited on 2021-10-27
417
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1890
since deposited on 2021-10-27
417
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations