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3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
Publication:
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
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Date
2020
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vandooren, Anne
;
Wu, Zhicheng
;
Parihar, Narendra
;
Franco, Jacopo
;
Parvais, Bertrand
;
Matagne, Philippe
;
Debruyn, Haroen
;
Mannaert, Geert
;
Devriendt, Katia
;
Teugels, Lieve
;
Vecchio, Emma
;
Radisic, Dunja
;
Rosseel, Erik
;
Hikavyy, Andriy
;
Chan, BT
;
Waldron, Niamh
;
Mitard, Jerome
;
Besnard, G.
;
Alvarez, A.
;
Gaudin, G.
;
Schwarzenbach, W.
;
Radu, I.
;
Nguyen, B. Y.
;
Huet, K.
;
Tabata, T.
;
Mazzamuto, F.
;
Demuynck, Steven
;
Boemmels, Juergen
;
Collaert, Nadine
;
Horiguchi, Naoto
Journal
na
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1967
since deposited on 2021-11-02
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last month
Acq. date: 2025-12-11
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Metrics
Views
1967
since deposited on 2021-11-02
1
last month
Acq. date: 2025-12-11
Citations