EUV Single Patterning Exploration for Pitch 28 nm

Abstract

EUV single patterning opportunity for pitch 28nm metal design is explored. Bright field mask combined with a negative tone develop process is used to improve pattern fidelity and overall process window. imec N3 (Foundry N2 equivalent) logic PNR (place and route) designs are used to deliver optimized pupil through source mask optimization and evaluate OPC technology. DFM (Design For Manufacturing) related topics such as dummy metal insertion and design CD retarget are addressed together with critical design rules (e.g. Tip-to-Tip), to provide balanced design and patterning performance. Relevant wafer data are shown as a proof of above optimization process.