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On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications

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1779 since deposited on 2021-11-02
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Acq. date: 2026-07-16

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1779 since deposited on 2021-11-02
1last month
1last week
Acq. date: 2026-07-16

Citations