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Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

dc.contributor.authorAsselberghs, Inge
dc.contributor.authorSmets, Quentin
dc.contributor.authorSchram, Tom
dc.contributor.authorGroven, Benjamin
dc.contributor.authorVerreck, Devin
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorGaur, Abhinav
dc.contributor.authorCott, Daire
dc.contributor.authorMaurice, Thibaut
dc.contributor.authorBrems, Steven
dc.contributor.authorKennes, Koen
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorRadisic, Dunja
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorThiam, Arame
dc.contributor.authorLi, Waikin
dc.contributor.authorDevriendt, Katia
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorMorin, Pierre
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-12-08T11:04:21Z
dc.date.available2021-12-06T02:06:35Z
dc.date.available2021-12-08T11:04:21Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600038
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38548.2
dc.sourceWOS
dc.titleWafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab
dc.typeProceedings paper
dc.contributor.imecauthorAsselberghs, I
dc.contributor.imecauthorSmets, Q.
dc.contributor.imecauthorSchram, T.
dc.contributor.imecauthorGroven, B.
dc.contributor.imecauthorVerreck, D.
dc.contributor.imecauthorAfzalian, A.
dc.contributor.imecauthorArutchelvan, G.
dc.contributor.imecauthorGaur, A.
dc.contributor.imecauthorCott, D.
dc.contributor.imecauthorMaurice, T.
dc.contributor.imecauthorBrems, S.
dc.contributor.imecauthorKennes, K.
dc.contributor.imecauthorPhommahaxay, A.
dc.contributor.imecauthorDupuy, E.
dc.contributor.imecauthorRadisic, D.
dc.contributor.imecauthorDe Marneffe, J-F
dc.contributor.imecauthorThiam, A.
dc.contributor.imecauthorLi, W.
dc.contributor.imecauthorDevriendt, K.
dc.contributor.imecauthorHuyghebaert, C.
dc.contributor.imecauthorLin, D.
dc.contributor.imecauthorCaymax, M.
dc.contributor.imecauthorMorin, P.
dc.contributor.imecauthorRadu, I. P.
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorMaurice, Thibaut
dc.contributor.imecauthorBrems, Steven
dc.contributor.imecauthorKennes, Koen
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorThiam, Arame
dc.contributor.imecauthorLi, Waikin
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.contributor.orcidimecBrems, Steven::0000-0002-0282-8528
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.identifier.doi10.1109/IEDM13553.2020.9371926
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/38548.2*2021-12-08T10:55:42Zvalidation by library/open access desk
120.500.12860/385482021-12-06T02:06:35Z

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